Semiconductor test system

Discrete test system

SETS-200 DC test system (1.2kV/20A)

SETS-200 is DC test system designed for high speed DC testing for small signal to high current of diode, transistor, MOSFET.

　　　　　　　　
【SETS-200】

　
　　　
Features
  • Reduce test time by 1mS high speed relay operation
  • Controllable Max.4 sets multi-test per PC
  • Backup function of production history
  • Easy test program editing by Excel like
  • Arbitrary waveform function
  • Built-in 1mV small voltage detection circuit (option)
　
Specifications highlight 　　
  Detection  Applied voltage 
High voltage0.0000V～1.2000kV 0.000uA～50.00mA
Small electric current  000.00pA～999.99uA 0.000V～1.200kV
Constant voltage 00.000mV～40.000V 0.000uA～20.00A
Electric current 0.0000uA～20.000A 000.0mV～40.00V


SETS-400 DC test system (2kV/100A)

SETS-400 is DC test system designed for high speed DC testing for high current of diode, transistor, MOSFET.

【SETS-400】

　
Features
  • Reduce test time by 1mS high speed relay operation
  • Controllable Max.4 sets multi-test per PC
  • Backup function of production history
  • Easy test program editing by Excel like
  • Thermal resistance test is available (option)
  • Built-in 1mV small voltage detection circuit (option)
　
Specifications highlight
  Detection  Applied voltage 
High voltage 00.000V～2.0000kV 0.000uA～50.00mA
Small electric current  000.00pA～999.99uA 0.000V～2.000kV
Constant voltage 00.000mV～80.000V 0.000uA～99.99A
Electric current 0.0000uA～99.999A 000.0mV～80.00V


ILT-1000　L-load test system（2000V/100A/200V）

ILT-1000 is GO/NG judgment tester of setting Vsus:- VGATE,IH,IL by observed waveform of turn off caused L-load on MOSFET.

【ILT-1000】

　
Features
  • Capable of judgment and showing Vsus,IDP,TG
  • Slight ms Measurement (depend on the test conditions)
  • 2 stations ping-pong measurement
  • Compact and fitting with main unit by exclusive coils.
  • Capable of detection the coils which are not specified in the test program by TG watching
　
Specifications highlight
Item Setup range  Resolution power 
drain electric current（ID） 0.5A～100.0A 0.1A
drain voltage（VD）  10.0V～200.0V 0.1V
gate forward voltage（VGS） 0.0V～30.0V 0.1V
gate reverse voltage（VGR） -0.0V～-30.0V 0.1V
area designated electric current （IH/IL） 0.2A～100.0A 0.1A
Vsus limit（V-GATE） 10V～2000V 1V


TRT-1000　Thermal resistance test system（200V/50A）

TRT-1000 measuresΔVF using feature, which thermal resistance (θjc) of MOS-FET, transistor etc and forward voltage of PN junction are proportionate to temperature change, determines with comparing specified value and sorts.

【TRT-1000】

　
Features
  • Circuit composition time is short due not to used mechanical relay on measurement circuit
  • Realized optimum circuit conditions by unique architecture, exchange front measurement UNIT to head box and connected.
  • Measured current is settable at contact optionally. measured value display of contact resistance is available.
  • Easy waveform observation by PC display of its waveform at each terminal points.
  • Easy finding of faulty in each Bias circuit through self-diagnosis.
　
Specifications highlight
Item Measurement range  Resolution power 
VBE1/VSD1/VGE1/VCE1/VF1 0000mV～9999mV 1mV
drain voltage（VD）  10.0V～200.0V 0.1V
ΔVBE/ΔVSD/ΔVGE/ΔVCE/ΔVF 000.0mV～999.9mV 0.1mV
ΔVBE/ΔVSD/ΔVGE/ΔVCE/ΔVF 0000mV～9999mV 1mV
Item Measurement range  Resolution power 
VCB/VDS 000.1V～200.0V 0.1V
IE/ID/IF 00.001A～50.000A 0.001A
IM 001mA～400mA 1mA
Power Time (PT) 100us～9.99s 3 digits least Bit
Delay Time (DT) 010us～999us 1us
Gate Limit (G-Limit) 1.0V～20.0V 0.1V
Lower Gate (LOW) 000.0mV～999.9mV 0.1mV
/Upper Gate (UP) 0000mV～9999mV 1mV
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